DMT4011LSS-13
  • Share:

Diodes Incorporated DMT4011LSS-13

Manufacturer No:
DMT4011LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT4011LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 10.8A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:829 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.31W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.19
2,021

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT4011LSS-13 DMT6011LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta) 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 829 pF @ 20 V 1072 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.31W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

BUK765R0-100E,118
BUK765R0-100E,118
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
AON7290
AON7290
Alpha & Omega Semiconductor Inc.
MOSFET N CH 100V 15A 8DFN
GKI04076
GKI04076
Sanken
MOSFET N-CH 40V 11A 8DFN
AOB1100L
AOB1100L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 8A/130A TO263
STB32N65M5
STB32N65M5
STMicroelectronics
MOSFET N-CH 650V 24A D2PAK
IPP65R380C6
IPP65R380C6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRFZ48NL
IRFZ48NL
Infineon Technologies
MOSFET N-CH 55V 64A TO262
IRF7807D1PBF
IRF7807D1PBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
SSM3K35MFV(TPL3)
SSM3K35MFV(TPL3)
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 180MA VESM
NTMFS4943NT1G
NTMFS4943NT1G
onsemi
MOSFET N-CH 30V 8.3A/41A 5DFN
AOK5N100L
AOK5N100L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 1000V 4A TO247
RP1A090ZPTR
RP1A090ZPTR
Rohm Semiconductor
MOSFET P-CH 12V 9A MPT6

Related Product By Brand

SMF4L40CAQ-7
SMF4L40CAQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FD1200033Q
FD1200033Q
Diodes Incorporated
XTAL OSC XO 12.0000MHZ CMOS SMD
FJ5000018
FJ5000018
Diodes Incorporated
XTAL OSC SO 50.0000MHZ CMOS SMD
PDS835L-7
PDS835L-7
Diodes Incorporated
SCHOTTKY RECTIFIER PDI5
DSC04065
DSC04065
Diodes Incorporated
SILICON CARBIDE RECTIFIER TO220A
PR1504S-T
PR1504S-T
Diodes Incorporated
DIODE GEN PURP 400V 1.5A DO41
BC847BT-7
BC847BT-7
Diodes Incorporated
TRANS NPN 45V 0.1A SOT523
DCP69-25-13
DCP69-25-13
Diodes Incorporated
TRANS PNP 20V 1A SOT223-3
BSS84-7-F
BSS84-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
DMP2305UVT-7
DMP2305UVT-7
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23-3
74LVC1G126FX4-7
74LVC1G126FX4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
AZ34063CMTR-G1
AZ34063CMTR-G1
Diodes Incorporated
IC REG BUCK BST ADJ 1A 8SOIC