DMT4011LSS-13
  • Share:

Diodes Incorporated DMT4011LSS-13

Manufacturer No:
DMT4011LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT4011LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 10.8A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:829 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.31W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.19
2,021

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT4011LSS-13 DMT6011LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta) 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 829 pF @ 20 V 1072 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.31W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IXFT120N25X3HV
IXFT120N25X3HV
IXYS
MOSFET N-CH 250V 120A TO268HV
FDS3692
FDS3692
onsemi
MOSFET N-CH 100V 4.5A 8SOIC
NTMFS6B05NT1G
NTMFS6B05NT1G
onsemi
MOSFET N-CH 100V 16A/104A 5DFN
IRL520PBF
IRL520PBF
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO220AB
SIHH20N50E-T1-GE3
SIHH20N50E-T1-GE3
Vishay Siliconix
MOSFET N-CH 500V 22A PPAK 8 X 8
RJK0455DPB-00#J5
RJK0455DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 40V 45A LFPAK
RM17N800TI
RM17N800TI
Rectron USA
MOSFET N-CHANNEL 800V 17A TO220F
IXFH40N50Q
IXFH40N50Q
IXYS
MOSFET N-CH 500V 40A TO247AD
IPB80P03P4L07ATMA1
IPB80P03P4L07ATMA1
Infineon Technologies
MOSFET P-CH 30V 80A TO263-3
FDP8878
FDP8878
onsemi
MOSFET N-CH 30V 40A TO220-3
NTMFS4846NT1G
NTMFS4846NT1G
onsemi
MOSFET N-CH 30V 12.7A/100A 5DFN
BSC020N03LSGATMA2
BSC020N03LSGATMA2
Infineon Technologies
LV POWER MOS

Related Product By Brand

FL4000050
FL4000050
Diodes Incorporated
CRYSTAL 40.0000MHZ 18PF SMD
FP2500070
FP2500070
Diodes Incorporated
CRYSTAL 25.0000MHZ 10PF SMD
FK2500070
FK2500070
Diodes Incorporated
XTAL OSC SO 25.0000MHZ CMOS SMD
FD2450019
FD2450019
Diodes Incorporated
XTAL OSC XO 24.5760MHZ CMOS SMD
DFLS2100-7
DFLS2100-7
Diodes Incorporated
DIODE SCHOTTKY 100V POWERDI123
PR1002GL-T
PR1002GL-T
Diodes Incorporated
DIODE GEN PURP 100V 1A DO41
SBRT3M60SA-13
SBRT3M60SA-13
Diodes Incorporated
DIODE SBR 60V 3A SMA
DDZ6V8B-7
DDZ6V8B-7
Diodes Incorporated
DIODE ZENER 6.8V 310MW SOD123
DDZ9681Q-7
DDZ9681Q-7
Diodes Incorporated
DIODE ZENER 2.4V 500MW SOD123
74LVC2G07W6-7
74LVC2G07W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26
74AHCT1G86QSE-7
74AHCT1G86QSE-7
Diodes Incorporated
IC GATE XOR 1CH 2-INP SOT353
PI3B3245LE
PI3B3245LE
Diodes Incorporated
IC BUS SWITCH 8 X 1:1 20TSSOP