DMT32M4LPSW-13
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Diodes Incorporated DMT32M4LPSW-13

Manufacturer No:
DMT32M4LPSW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT32M4LPSW-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V POWERDI506
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3944 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI5060-8 (Type UX)
Package / Case:8-PowerTDFN
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Similar Products

Part Number DMT32M4LPSW-13 DMT32M5LPSW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3944 pF @ 15 V 4389 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 83W (Tc) 3.2W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI5060-8 (Type UX) PowerDI5060-8 (Type UX)
Package / Case 8-PowerTDFN 8-PowerTDFN

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