DMT3009LFVWQ-7
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Diodes Incorporated DMT3009LFVWQ-7

Manufacturer No:
DMT3009LFVWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT3009LFVWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12A PWRDI3333
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3.8V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:823 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 35.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI3333-8 (SWP) Type UX
Package / Case:8-PowerVDFN
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Similar Products

Part Number DMT3009LFVWQ-7 DMT3009LFVW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V 3.8V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V 11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 823 pF @ 15 V 823 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 35.7W (Tc) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN 8-PowerVDFN

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