Diodes Incorporated-DMT3009LFVWQ-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	3.8V, 10V
Rds On (Max) @ Id, Vgs:	11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	823 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.3W (Ta), 35.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	PowerDI3333-8 (SWP) Type UX
Package / Case:	8-PowerVDFN

Diodes Incorporated DMT3009LFVWQ-13