Diodes Incorporated-DMT2004UFV-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	24 V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	53.7 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	1683 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerDI3333-8 (Type UX)
Package / Case:	8-PowerVDFN

Diodes Incorporated DMT2004UFV-13