Diodes Incorporated-DMT15H017LPSW-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	9.4A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3369 pF @ 75 V
FET Feature:	-
Power Dissipation (Max):	1.3W (Ta), 89W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	PowerDI5060-8 (Type UX)
Package / Case:	8-PowerTDFN

Diodes Incorporated DMT15H017LPSW-13