Diodes Incorporated-DMT12H090LFDF4-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	115 V
Current - Continuous Drain (Id) @ 25°C:	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 10V
Rds On (Max) @ Id, Vgs:	90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	251 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	X2-DFN2020-6
Package / Case:	6-PowerXDFN

Diodes Incorporated DMT12H090LFDF4-13