Diodes Incorporated-DMT10H072LFV-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	228 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerDI3333-8 (Type UX)
Package / Case:	8-PowerVDFN

Diodes Incorporated DMT10H072LFV-13