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| Part Number | DMT10H072LFDFQ-7 | DMT10H072LFDF-7 |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 10V | 62mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V | 5.1 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 50 V | 266 pF @ 50 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.8W (Ta) | 800mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | U-DFN2020-6 (Type F) | U-DFN2020-6 (Type F) |
| Package / Case | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad |
