DMT10H072LFDF-7
  • Share:

Diodes Incorporated DMT10H072LFDF-7

Manufacturer No:
DMT10H072LFDF-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT10H072LFDF-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 4A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:266 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.29
3,405

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT10H072LFDF-7 DMT10H072LFDFQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V 4.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 266 pF @ 50 V 228 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

FDN363N
FDN363N
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FDFMJ2P023Z
FDFMJ2P023Z
Fairchild Semiconductor
MOSFET P-CH 20V 2.9A SC75 MICROF
IPW65R310CFD
IPW65R310CFD
Infineon Technologies
N-CHANNEL POWER MOSFET
IXFA130N10T2
IXFA130N10T2
IXYS
MOSFET N-CH 100V 130A TO263
SIHP20N50E-GE3
SIHP20N50E-GE3
Vishay Siliconix
MOSFET N-CH 500V 19A TO220AB
RM7N40S4
RM7N40S4
Rectron USA
MOSFET N-CHANNEL 40V 5A SOT223-3
STD70N6F3
STD70N6F3
STMicroelectronics
MOSFET N-CH 60V 70A DPAK
IPA65R150CFDXKSA2
IPA65R150CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 22.4A TO220
IPB14N03LA G
IPB14N03LA G
Infineon Technologies
MOSFET N-CH 25V 30A TO263-3
NVD5413NT4G
NVD5413NT4G
onsemi
MOSFET N-CH 60V 30A DPAK
2SK1339-E
2SK1339-E
Renesas Electronics America Inc
MOSFET N-CH 900V 3A TO3P
CPH3461-TL-W
CPH3461-TL-W
onsemi
MOSFET N-CH 250V 350MA 3CPH

Related Product By Brand

3.0SMCJ9.0CA-13
3.0SMCJ9.0CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
TB3100L-13-F
TB3100L-13-F
Diodes Incorporated
THYRISTOR 275V 150A DO214AA
S1613E-33.0000(T)
S1613E-33.0000(T)
Diodes Incorporated
XTAL OSC XO 33.0000MHZ LVCMOS
FNC500134
FNC500134
Diodes Incorporated
XTAL OSC XO 125.0000MHZ CMOS SMD
FND300014
FND300014
Diodes Incorporated
XTAL OSC XO 133.0000MHZ CMOS
NX72K00001
NX72K00001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
BZX84C2V7-7-F
BZX84C2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23-3
ZXT14P12DXTA
ZXT14P12DXTA
Diodes Incorporated
TRANS PNP LO SAT -12V -6A 8-MSOP
DDTC143TCA-7-F
DDTC143TCA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
PI2EQX8864AZLEX
PI2EQX8864AZLEX
Diodes Incorporated
IC REDRIVER PCIE 4CH 72TQFN
PI3B3257QEX-2017
PI3B3257QEX-2017
Diodes Incorporated
BUS SWITCH 3V QSOP-16
PT7M7823KTAEX
PT7M7823KTAEX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-5