DMT10H025SSS-13
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Diodes Incorporated DMT10H025SSS-13

Manufacturer No:
DMT10H025SSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT10H025SSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 7.4A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1544 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMT10H025SSS-13 DMT10H025LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.4 nC @ 10 V 22.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1544 pF @ 50 V 1639 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.3W (Ta), 12.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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