DMT10H025LSS-13
  • Share:

Diodes Incorporated DMT10H025LSS-13

Manufacturer No:
DMT10H025LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT10H025LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 61V~100V SO-8 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1639 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta), 12.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.28
1,812

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT10H025LSS-13 DMT10H025SSS-13   DMT10H015LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Ta) 7.4A (Ta) 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V 23mOhm @ 20A, 10V 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.9 nC @ 10 V 21.4 nC @ 10 V 33.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 50 V 1544 pF @ 50 V 1871 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta), 12.9W (Tc) 1.4W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

PSMN1R9-40PLQ
PSMN1R9-40PLQ
Nexperia USA Inc.
MOSFET N-CH 40V 150A TO220AB
IPD075N03LGATMA1
IPD075N03LGATMA1
Infineon Technologies
MOSFET N-CH 30V 50A TO252-3
UPA2521T1H-T1-AT
UPA2521T1H-T1-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 8A 8VSOF
HUFA75333G3
HUFA75333G3
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
STW56N60M2
STW56N60M2
STMicroelectronics
MOSFET N-CH 600V 52A TO247
NTDV20N06LT4G-VF01
NTDV20N06LT4G-VF01
onsemi
MOSFET N-CH 60V 20A DPAK
NDT455N
NDT455N
onsemi
MOSFET N-CH 30V 11.5A SOT223-4
SFT1341-W
SFT1341-W
onsemi
MOSFET P-CH 40V 10A IPAK/TP
IRFS7437-7PPBF
IRFS7437-7PPBF
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
DMP32D5LFA-7B
DMP32D5LFA-7B
Diodes Incorporated
MOSFET P-CH 30V 300MA 3DFN
AO6400_201
AO6400_201
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 6.9A 6TSOP
RSD080N06TL
RSD080N06TL
Rohm Semiconductor
MOSFET N-CH 60V 8A CPT3

Related Product By Brand

SMF4L75AQ-7
SMF4L75AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
SMCJ16A-13
SMCJ16A-13
Diodes Incorporated
TVS DIODE 16VWM 26VC SMC
FW1600029Q
FW1600029Q
Diodes Incorporated
CRYSTAL 16.0000MHZ 8PF SMD
FH2400097
FH2400097
Diodes Incorporated
CRYSTAL 24.0000MHZ 8PF SMD
FKA000022Q
FKA000022Q
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS SMD
BAT54SDWQ-7-F
BAT54SDWQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT363
BAT64-7-F
BAT64-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23
DDZX33Q-7
DDZX33Q-7
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23
BS170P
BS170P
Diodes Incorporated
MOSFET N-CH 60V 270MA TO92-3
ZVP2106A
ZVP2106A
Diodes Incorporated
MOSFET P-CH 60V 280MA TO92-3
PI3EQX10904ZHE
PI3EQX10904ZHE
Diodes Incorporated
IC REDRIVER ETHERNET 42TQFN
AP1122DG-13
AP1122DG-13
Diodes Incorporated
IC REG LINEAR 1.2V 1A TO252-3