DMT10H014LSS-13
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Diodes Incorporated DMT10H014LSS-13

Manufacturer No:
DMT10H014LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT10H014LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8.9A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1871 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMT10H014LSS-13 DMT10H015LSS-13   DMT10H010LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta) 8.3A (Ta) 11.5A (Ta), 29.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V 16mOhm @ 20A, 10V 9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3.5V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V 33.3 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V 1871 pF @ 50 V 3000 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.2W (Ta) 1.2W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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