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| Part Number | DMT10H010LSS-13 | DMT10H015LSS-13 | DMT10H014LSS-13 |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Status | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 29.5A (Tc) | 8.3A (Ta) | 8.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 13A, 10V | 16mOhm @ 20A, 10V | 15mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA | 3.5V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V | 33.3 nC @ 10 V | 33.3 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V | 1871 pF @ 50 V | 1871 pF @ 50 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 1.4W (Ta) | 1.2W (Ta) | 1.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SO | 8-SO | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
