DMS3016SSSA-13
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Diodes Incorporated DMS3016SSSA-13

Manufacturer No:
DMS3016SSSA-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMS3016SSSA-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9.8A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1849 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):1.54W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMS3016SSSA-13 DMS3016SSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 9.8A, 10V 13mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1849 pF @ 15 V 1849 pF @ 15 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 1.54W (Ta) 1.54W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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