DMP6110SFDFQ-7
  • Share:

Diodes Incorporated DMP6110SFDFQ-7

Manufacturer No:
DMP6110SFDFQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP6110SFDFQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 3.5A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:969 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.64
1,339

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMP6110SFDFQ-7 DMP6110SFDF-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 4.5A, 10V 110mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V 17.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 969 pF @ 30 V 969 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 760mW (Ta) 1.97W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

BSZ010NE2LS5ATMA1
BSZ010NE2LS5ATMA1
Infineon Technologies
MOSFET N-CH 25V 32A/40A TSDSON
STD16N65M5
STD16N65M5
STMicroelectronics
MOSFET N-CH 650V 12A DPAK
FDMS7650DC
FDMS7650DC
onsemi
MOSFET N-CH 30V 47A POWER56
SQJ431AEP-T1_BE3
SQJ431AEP-T1_BE3
Vishay Siliconix
P-CHANNEL 200-V (D-S) 175C MOSFE
STH2N120K5-2AG
STH2N120K5-2AG
STMicroelectronics
MOSFET N-CH 1200V 1.5A H2PAK-2
NVMFS6H800NWFT1G
NVMFS6H800NWFT1G
onsemi
MOSFET N-CH 80V 28A/203A 5DFN
IRFR4105ZTRR
IRFR4105ZTRR
Infineon Technologies
MOSFET N-CH 55V 30A DPAK
IRF9530NSPBF
IRF9530NSPBF
Infineon Technologies
MOSFET P-CH 100V 14A D2PAK
NTD32N06LG
NTD32N06LG
onsemi
MOSFET N-CH 60V 32A DPAK
IXTH1N100
IXTH1N100
IXYS
MOSFET N-CH 1000V 1.5A TO247
PMN28UN,165
PMN28UN,165
NXP USA Inc.
MOSFET N-CH 12V 5.7A 6TSOP
2SK3019TL
2SK3019TL
Rohm Semiconductor
MOSFET N-CH 30V 100MA EMT3

Related Product By Brand

SMCJ6.0CAQ-13-F
SMCJ6.0CAQ-13-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FM2450003
FM2450003
Diodes Incorporated
XTAL OSC XO 24.5760MHZ CMOS SMD
UJ2600007Z
UJ2600007Z
Diodes Incorporated
XTAL OSC XO 26.0000MHZ SNWV SMD
SBR10200CTB
SBR10200CTB
Diodes Incorporated
DIODE ARRAY SBR 200V 5A D2PAK
MBR10150CT-E1
MBR10150CT-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 150V TO220
BAS20Q-13-F
BAS20Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
DZT853-13
DZT853-13
Diodes Incorporated
TRANS NPN 100V 6A SOT223-3
ZXMN2A03E6TA
ZXMN2A03E6TA
Diodes Incorporated
MOSFET N-CH 20V 3.7A SOT23-6
DMN21D2UFB-7B
DMN21D2UFB-7B
Diodes Incorporated
MOSFET N-CH 20V 760MA 3DFN
AP22816AKEWT-7
AP22816AKEWT-7
Diodes Incorporated
USBPOWERSWITCHTSOT25T&R3K
ZSM330CSTOB
ZSM330CSTOB
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL TO92-3
ZXRE4041DRSTZ
ZXRE4041DRSTZ
Diodes Incorporated
IC VREF SHUNT 1% E-LINE