Diodes Incorporated-DMP57D5UFB-7 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50 V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Rds On (Max) @ Id, Vgs:	6Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	29 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	425mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	X1-DFN1006-3
Package / Case:	3-UFDFN

Diodes Incorporated DMP57D5UFB-7