DMP510DL-7
  • Share:

Diodes Incorporated DMP510DL-7

Manufacturer No:
DMP510DL-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP510DL-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 50V 180MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:24.6 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.35
1,869

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMP510DL-7 DMP510DLQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 196mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 9.5Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 0.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 24.6 pF @ 25 V 40 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 520mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRLML2803TRPBF
IRLML2803TRPBF
Infineon Technologies
MOSFET N-CH 30V 1.2A SOT23
STP16N65M2
STP16N65M2
STMicroelectronics
MOSFET N-CH 650V 11A TO220
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
TPH11006NL,LQ
TPH11006NL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 17A 8SOP
UPA2735GR-E1-AX
UPA2735GR-E1-AX
Renesas Electronics America Inc
MOSFET P-CH 30V 16A 8SOP
BSZ12DN20NS3G
BSZ12DN20NS3G
Infineon Technologies
BSZ12DN20 - 12V-300V N-CHANNEL P
IRF6722MTR1PBF
IRF6722MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 13A DIRECTFET
NTHS5441PT1G
NTHS5441PT1G
onsemi
MOSFET P-CH 20V 3.9A CHIPFET
NTD4913N-1G
NTD4913N-1G
onsemi
MOSFET N-CH 30V 7.7A/32A IPAK
AOT10N60_001
AOT10N60_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO220-3
BUK9518-55,127
BUK9518-55,127
NXP USA Inc.
MOSFET N-CH 55V 57A TO220AB
RE1C002ZPTL
RE1C002ZPTL
Rohm Semiconductor
MOSFET P-CH 20V 200MA EMT3F

Related Product By Brand

FJ2500009
FJ2500009
Diodes Incorporated
XTAL OSC XO 25.0000MHZ LVCMOS
DF02M
DF02M
Diodes Incorporated
BRIDGE RECT 1PHASE 200KV 1A DFM
PDU620CT-13
PDU620CT-13
Diodes Incorporated
DIODE ARRAY GP 200V 3A POWERDI5
B1100-13
B1100-13
Diodes Incorporated
DIODE SCHOTTKY 100V 1A SMA
SD830-T
SD830-T
Diodes Incorporated
DIODE SCHOTTKY 30V 8A DO201AD
DMN2710UDWQ-7
DMN2710UDWQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT363 T&R
DMC2057UVT-13
DMC2057UVT-13
Diodes Incorporated
MOSFET BVDSS: 8V-24V TSOT26 T&R
PI49FCT3807CQEX
PI49FCT3807CQEX
Diodes Incorporated
IC CLK BUFFER 1:10 100MHZ 20QSOP
74AHCT1G08QW5-7
74AHCT1G08QW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT25
AP3845GUP-G1
AP3845GUP-G1
Diodes Incorporated
IC OFFLINE SWITCH 8DIP
ZXRE4041CFTA
ZXRE4041CFTA
Diodes Incorporated
IC VREF SHUNT 0.5% SOT23
ZXRE1004DFTA
ZXRE1004DFTA
Diodes Incorporated
IC VREF SHUNT 1% SOT23