DMP4006SPSWQ-13
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Diodes Incorporated DMP4006SPSWQ-13

Manufacturer No:
DMP4006SPSWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP4006SPSWQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V~60V POWERDI506
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:115A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6855 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.4W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI5060-8 (Type UX)
Package / Case:8-PowerTDFN
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In Stock

$2.06
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Similar Products

Part Number DMP4006SPSWQ-13 DMP4006SPSW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc) 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 9.8A, 10V 5.2mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V 162 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6855 pF @ 20 V 6855 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.4W (Ta), 104W (Tc) 3.4W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI5060-8 (Type UX) PowerDI5060-8 (Type UX)
Package / Case 8-PowerTDFN 8-PowerTDFN

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