Diodes Incorporated-DMP31D0UFB4-7B - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.9 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	76 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	460mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	X2-DFN1006-3
Package / Case:	3-XFDFN

Diodes Incorporated DMP31D0UFB4-7B