Diodes Incorporated-DMP25H18DLFDE-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3.5V, 10V
Rds On (Max) @ Id, Vgs:	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	2.8 nC @ 10 V
Vgs (Max):	±40V
Input Capacitance (Ciss) (Max) @ Vds:	81 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	U-DFN2020-6 (Type E)
Package / Case:	6-PowerUDFN

Diodes Incorporated DMP25H18DLFDE-13