DMP2160UFDB-7
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Diodes Incorporated DMP2160UFDB-7

Manufacturer No:
DMP2160UFDB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2160UFDB-7 Datasheet
ECAD Model:
-
Description:
MOSFET 2P-CH 20V 3.8A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.8A
Rds On (Max) @ Id, Vgs:70mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:536pF @ 10V
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:U-DFN2020-6 (Type B)
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Similar Products

Part Number DMP2160UFDB-7 DMP2160UFDBQ-7   DMP2060UFDB-7   DMP2110UFDB-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Standard Standard Standard
Drain to Source Voltage (Vdss) 20V 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 3.8A 3.8A 3.2A 3.2A (Ta)
Rds On (Max) @ Id, Vgs 70mOhm @ 2.8A, 4.5V 70mOhm @ 2.8A, 4.5V 90mOhm @ 2.9A, 4.5V 75mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 1.4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V 6.5nC @ 4.5V 18nC @ 8V 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 536pF @ 10V 536pF @ 10V 881pF @ 10V 443pF @ 10V
Power - Max 1.4W 1.4W 1.4W 820mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) U-DFN2020-6 (Type B)

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