DMP2120U-13
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Diodes Incorporated DMP2120U-13

Manufacturer No:
DMP2120U-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2120U-13 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3.8A SOT23 T&R 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:62mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:487 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.06
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Similar Products

Part Number DMP2120U-13 DMP2170U-13   DMP2110U-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 3.1A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.2A, 4.5V 90mOhm @ 3.5A, 4.5V 80mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.25V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V 7.8 nC @ 10 V 6 nC @ 4.5 V
Vgs (Max) ±8V ±12V ±10V
Input Capacitance (Ciss) (Max) @ Vds 487 pF @ 20 V 303 pF @ 10 V 443 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 800mW 780mW (Ta) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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