DMP2075UVT-7
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Diodes Incorporated DMP2075UVT-7

Manufacturer No:
DMP2075UVT-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2075UVT-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3.8A TSOT26 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:75mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:642 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-26
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number DMP2075UVT-7 DMP2035UVT-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 75mOhm @ 4A, 4.5V 35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 4.5 V 23.1 nC @ 4.5 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 642 pF @ 10 V 2400 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TSOT-26 TSOT-26
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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