DMP2067LSS-13
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Diodes Incorporated DMP2067LSS-13

Manufacturer No:
DMP2067LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2067LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V SO-8 T&R 2.
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta), 12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:38mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1575 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMP2067LSS-13 DMP2066LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 12.9A (Tc) 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 5A, 4.5V 40mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 8 V -
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1575 pF @ 10 V 820 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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