DMP2039UFDE-7
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Diodes Incorporated DMP2039UFDE-7

Manufacturer No:
DMP2039UFDE-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2039UFDE-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 25V 6.7A 6UDFN
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:27mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48.7 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
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Similar Products

Part Number DMP2039UFDE-7 DMP2039UFDE4-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta) 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 6.4A, 4.5V 26mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48.7 nC @ 8 V 28.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 15 V 2530 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 690mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type E) X2-DFN2020-6
Package / Case 6-PowerUDFN 6-PowerXDFN

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