DMP2022LSSQ-13
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Diodes Incorporated DMP2022LSSQ-13

Manufacturer No:
DMP2022LSSQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2022LSSQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 9.3A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60.2 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2575 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.39
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Similar Products

Part Number DMP2022LSSQ-13 DMP2022LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60.2 nC @ 10 V 56.9 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2575 pF @ 10 V 2444 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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