DMP2008USS-13
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Diodes Incorporated DMP2008USS-13

Manufacturer No:
DMP2008USS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP2008USS-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V SO-8 T&R 2.
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:9mOhm @12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:159 nC @ 10 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:6820 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.33
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Similar Products

Part Number DMP2008USS-13 DMP2038USS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 38A (Tc) 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 9mOhm @12A, 4.5V 38mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 159 nC @ 10 V 14.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 6820 pF @ 10 V 1496 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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