Diodes Incorporated-DMP1100UCB4-7 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.3V, 4.5V
Rds On (Max) @ Id, Vgs:	83mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	820 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	670mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	X2-WLB0808-4
Package / Case:	4-XFBGA, WLBGA

Diodes Incorporated DMP1100UCB4-7