DMP1080UCB4-7
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Diodes Incorporated DMP1080UCB4-7

Manufacturer No:
DMP1080UCB4-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP1080UCB4-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 3.3A U-WLB1010-4
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):820mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-WLB1010-4
Package / Case:4-UFBGA, WLBGA
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Similar Products

Part Number DMP1080UCB4-7 DMP1081UCB4-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) 3A (Ta), 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 0.9V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 500mA, 4.5V 10Ohm @ 100mA, 0.9V
Vgs(th) (Max) @ Id 1V @ 250µA 650mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V 5 nC @ 4.5 V
Vgs (Max) -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 6 V 350 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 820mW (Ta) 820mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-WLB1010-4 U-WLB1010-4
Package / Case 4-UFBGA, WLBGA 4-UFBGA, WLBGA

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