DMP1022UFDEQ-7
  • Share:

Diodes Incorporated DMP1022UFDEQ-7

Manufacturer No:
DMP1022UFDEQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP1022UFDEQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 9.1A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42.6 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2953 pF @ 4 V
FET Feature:- 
Power Dissipation (Max):660mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
0 Remaining View Similar

In Stock

$0.28
95

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMP1022UFDEQ-7 DMP1022UFDE-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 9.1A (Ta) 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 16mOhm @ 8.2A, 4.5V 16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42.6 nC @ 5 V 42.6 nC @ 5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2953 pF @ 4 V 2953 pF @ 4 V
FET Feature - -
Power Dissipation (Max) 660mW (Ta) 660mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type E) U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN 6-PowerUDFN

Related Product By Categories

SIHP15N60E-GE3
SIHP15N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 15A TO220AB
IPAN60R600P7SXKSA1
IPAN60R600P7SXKSA1
Infineon Technologies
MOSFET N-CH 650V 6A TO220
FQPF7N60
FQPF7N60
onsemi
MOSFET N-CH 600V 4.3A TO220F
DMP3125L-7
DMP3125L-7
Diodes Incorporated
MOSFET P-CH 30V 2.5A SOT23
SQJ418EP-T1_GE3
SQJ418EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 100V 48A PPAK SO-8
IXTH40N50L2
IXTH40N50L2
IXYS
MOSFET N-CH 500V 40A TO247
SCTW35N65G2VAG
SCTW35N65G2VAG
STMicroelectronics
SICFET N-CH 650V 45A HIP247
HUFA75309D3
HUFA75309D3
onsemi
MOSFET N-CH 55V 19A IPAK
HUF76633P3
HUF76633P3
onsemi
MOSFET N-CH 100V 39A TO220-3
SI4466DY-T1-E3
SI4466DY-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 9.5A 8SO
2SK3844(Q)
2SK3844(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 45A TO220NIS
SCH2825-TL-E
SCH2825-TL-E
onsemi
MOSFET N-CH 30V 1.6A 6SCH

Related Product By Brand

FKC500009A
FKC500009A
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
BAS40W-05-7-F
BAS40W-05-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323
S5DC-13
S5DC-13
Diodes Incorporated
DIODE GEN PURP 200V 5A SMC
PR3002-T
PR3002-T
Diodes Incorporated
DIODE GEN PURP 100V 3A DO201AD
BZT52C5V1T-7
BZT52C5V1T-7
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOD523
BZT52C6V2SQ-7-F
BZT52C6V2SQ-7-F
Diodes Incorporated
ZENER DIODE SOD323 T&R 3K
BZX84C27S-7
BZX84C27S-7
Diodes Incorporated
DIODE ZENER ARRAY 27V SOT363
74AUP1G32FW4-7
74AUP1G32FW4-7
Diodes Incorporated
IC GATE OR 1CH 2-INP DFN1010-6
AP9101CAK-AJTRG1
AP9101CAK-AJTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT25
APX803L-18SA-7
APX803L-18SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP2213D-3.0TRE1
AP2213D-3.0TRE1
Diodes Incorporated
IC REG LINEAR 3V 500MA TO252-2
AH1803-WG-7
AH1803-WG-7
Diodes Incorporated
MAGNETIC SWITCH OMNIPOL SC59-3