DMP1012UFDF-7
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Diodes Incorporated DMP1012UFDF-7

Manufacturer No:
DMP1012UFDF-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP1012UFDF-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 12.6A/20A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:12.6A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:15mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1344 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):720mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type F)
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number DMP1012UFDF-7 DMP1022UFDF-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 12.6A (Ta), 20A (Tc) 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 15mOhm @ 5A, 4.5V 15.3mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 8 V 48.3 nC @ 8 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1344 pF @ 10 V 2712 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 720mW (Ta) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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