DMP1012UCB9-7
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Diodes Incorporated DMP1012UCB9-7

Manufacturer No:
DMP1012UCB9-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMP1012UCB9-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 8V 10A U-WLB1515-9
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:10mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 4 V
FET Feature:- 
Power Dissipation (Max):890mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-WLB1515-9
Package / Case:9-UFBGA, WLBGA
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Similar Products

Part Number DMP1012UCB9-7 DMP1011UCB9-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 10mOhm @ 2A, 4.5V 10mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 4.5 V 10.5 nC @ 4.5 V
Vgs (Max) -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 4 V 1060 pF @ 4 V
FET Feature - -
Power Dissipation (Max) 890mW (Ta) 890mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-WLB1515-9 U-WLB1515-9
Package / Case 9-UFBGA, WLBGA 9-UFBGA, WLBGA

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