DMNH6008SCTQ
  • Share:

Diodes Incorporated DMNH6008SCTQ

Manufacturer No:
DMNH6008SCTQ
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMNH6008SCTQ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 130A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:2596 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.00
163

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMNH6008SCTQ DMNH6008SCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) 20V 20V
Input Capacitance (Ciss) (Max) @ Vds 2596 pF @ 30 V 2596 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

NDP7061
NDP7061
Fairchild Semiconductor
MOSFET N-CH 60V 64A TO220-3
IPP60R250CPXKSA1
IPP60R250CPXKSA1
Infineon Technologies
MOSFET N-CH 650V 12A TO220-3
XP232P0501TR-G
XP232P0501TR-G
Torex Semiconductor Ltd
MOSFET P-CH 30V 450MA SOT23
DMT10H015LSS-13
DMT10H015LSS-13
Diodes Incorporated
MOSFET N-CH 100V 8.3A 8SO
FCHD190N65S3R0-F155
FCHD190N65S3R0-F155
onsemi
MOSFET N-CH 650V 17A TO247
IXTQ69N30P
IXTQ69N30P
IXYS
MOSFET N-CH 300V 69A TO3P
SI4413DDY-T1-GE3
SI4413DDY-T1-GE3
Vishay Siliconix
MOSFET P-CHANNEL 8SOIC
IPA60R600E6XKSA1
IPA60R600E6XKSA1
Infineon Technologies
MOSFET N-CH 600V 7.3A TO220-FP
NTB5605P
NTB5605P
onsemi
MOSFET P-CH 60V 18.5A D2PAK
NTD4863NAT4G
NTD4863NAT4G
onsemi
MOSFET N-CH 25V 9.2A/49A DPAK
SI7455DP-T1-E3
SI7455DP-T1-E3
Vishay Siliconix
MOSFET P-CH 80V 28A PPAK SO-8
SI2101-TP
SI2101-TP
Micro Commercial Co
MOSFET P-CH 20V 1.4A SOT323

Related Product By Brand

P6KE36A-T
P6KE36A-T
Diodes Incorporated
TVS DIODE 30.8VWM 49.9VC DO15
GC0600024
GC0600024
Diodes Incorporated
CRYSTAL 6.0000MHZ 20PF
FL2600030
FL2600030
Diodes Incorporated
CRYSTAL 26.0000MHZ 9PF SMD
FP1200039
FP1200039
Diodes Incorporated
CRYSTAL 12.0000MHZ 18PF SMD
FD3300022
FD3300022
Diodes Incorporated
XTAL OSC XO 33.0000MHZ CMOS SMD
B140HWQ-7
B140HWQ-7
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
DCX123JU-7-F
DCX123JU-7-F
Diodes Incorporated
TRANS NPN/PNP PREBIAS SOT363
ZTX855STOB
ZTX855STOB
Diodes Incorporated
TRANS NPN 150V 4A E-LINE
DMN2991UDA-7B
DMN2991UDA-7B
Diodes Incorporated
MOSFET 8V~24V X2-DFN0806-6
BSS84W-7-F
BSS84W-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
74AHCT1G32SE-7
74AHCT1G32SE-7
Diodes Incorporated
IC GATE OR 1CH 2-INP SOT353
AP7351D-08W5-7
AP7351D-08W5-7
Diodes Incorporated
LDO CMOS LOWCURR SOT25 T&R 3K