DMNH6008SCTQ
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Diodes Incorporated DMNH6008SCTQ

Manufacturer No:
DMNH6008SCTQ
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMNH6008SCTQ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 130A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:2596 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number DMNH6008SCTQ DMNH6008SCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) 20V 20V
Input Capacitance (Ciss) (Max) @ Vds 2596 pF @ 30 V 2596 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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