DMNH10H028SK3-13
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Diodes Incorporated DMNH10H028SK3-13

Manufacturer No:
DMNH10H028SK3-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMNH10H028SK3-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 55A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2245 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$0.63
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Similar Products

Part Number DMNH10H028SK3-13 DMNH10H028SK3Q-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 20A, 10V 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2245 pF @ 50 V 2245 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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