Diodes Incorporated-DMNH10H021SPSW-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	71 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3789 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	1.8W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	PowerDI5060-8 (Type UX)
Package / Case:	8-PowerTDFN

Diodes Incorporated DMNH10H021SPSW-13