DMN95H8D5HCT
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Diodes Incorporated DMN95H8D5HCT

Manufacturer No:
DMN95H8D5HCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMN95H8D5HCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 950V 2.5A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number DMN95H8D5HCT DMN95H8D5HCTI   DMN90H8D5HCT  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 2.5A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V 7Ohm @ 1A, 10V 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 10 V 7.9 nC @ 10 V 7.9 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 470 pF @ 25 V 470 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 30W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB ITO-220AB TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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