DMN67D8LW-13
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Diodes Incorporated DMN67D8LW-13

Manufacturer No:
DMN67D8LW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN67D8LW-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 240MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.82 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:22 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMN67D8LW-13 DMN63D8LW-13   DMN67D8L-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 240mA (Ta) 380mA (Ta) 210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 2.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 2.8Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.82 nC @ 10 V 0.9 nC @ 10 V 0.82 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 22 pF @ 25 V 23.2 pF @ 25 V 22 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 320mW (Ta) 300mW (Ta) 340mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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