DMN65D8L-7
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Diodes Incorporated DMN65D8L-7

Manufacturer No:
DMN65D8L-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN65D8L-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 310MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN65D8L-7 DMN67D8L-7   DMN65D8LQ-7   DMN65D9L-7   DMN65D8LW-7   DMN65D8LT-7   DMN65D8LV-7   DMN61D8L-7   DMN63D8L-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 210mA (Ta) 310mA (Ta) 335mA (Ta) 300mA (Ta) 210mA (Ta) 310mA (Ta) 470mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 4V, 10V 5V, 10V 5V, 10V 5V, 10V 3V, 5V 2.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 115mA, 10V 5Ohm @ 500mA, 10V 3Ohm @ 115mA, 10V 4Ohm @ 500mA, 10V 3Ohm @ 115mA, 10V 5Ohm @ 115mA, 10V 3Ohm @ 115mA, 10V 1.8Ohm @ 150mA, 5V 2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 1mA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87 nC @ 10 V 0.82 nC @ 10 V 0.87 nC @ 10 V 0.4 nC @ 4.5 V 0.87 nC @ 10 V 0.4 nC @ 4.5 V 0.87 nC @ 10 V 0.74 nC @ 5 V 0.9 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V ±16V ±20V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 22 pF @ 25 V 22 pF @ 25 V 22 pF @ 25 V 41 pF @ 25 V 22 pF @ 25 V 24 pF @ 25 V 22 pF @ 25 V 12.9 pF @ 12 V 23.2 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 370mW (Ta) 340mW (Ta) 370mW (Ta) 270mW (Ta) 300mW (Ta) 300mW (Ta) 370mW (Ta) 390mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-323 SOT-523 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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