DMN63D8LDW-13
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Diodes Incorporated DMN63D8LDW-13

Manufacturer No:
DMN63D8LDW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN63D8LDW-13 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 0.22A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:220mA
Rds On (Max) @ Id, Vgs:2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:22pF @ 25V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Similar Products

Part Number DMN63D8LDW-13 DMN67D8LDW-13   DMN33D8LDW-13   DMN63D1LDW-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Standard Standard
Drain to Source Voltage (Vdss) 30V 60V 30V 60V
Current - Continuous Drain (Id) @ 25°C 220mA 230mA 250mA 250mA
Rds On (Max) @ Id, Vgs 2.8Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V 2.4Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 2.5V @ 250µA 1.5V @ 100µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V 0.82nC @ 10V 1.23nC @ 10V 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V 22pF @ 25V 48pF @ 5V 30pF @ 25V
Power - Max 300mW 320mW 350mW 310mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-23-3

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