DMN63D1LW-13
  • Share:

Diodes Incorporated DMN63D1LW-13

Manufacturer No:
DMN63D1LW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN63D1LW-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 380MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.04
19,997

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN63D1LW-13 DMN63D8LW-13   DMN63D1L-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 380mA (Ta) 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 2.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2.8Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 1.5V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.3 nC @ 4.5 V 0.9 nC @ 10 V 0.3 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V 23.2 pF @ 25 V 30 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 310mW (Ta) 300mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSP250,115
BSP250,115
Nexperia USA Inc.
MOSFET P-CH 30V 3A SOT223
IXFH48N60X3
IXFH48N60X3
IXYS
MOSFET ULTRA JCT 600V 48A TO247
18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
SQ2348ES-T1_GE3
SQ2348ES-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 8A TO236
FCD5N60TM-WS
FCD5N60TM-WS
onsemi
MOSFET N-CH 600V 4.6A DPAK
PSMN1R4-40YLD,115-NEX
PSMN1R4-40YLD,115-NEX
Nexperia USA Inc.
100A, 40V, 0.00185OHM, N CHANNEL
IPI90R500C3XKSA2
IPI90R500C3XKSA2
Infineon Technologies
MOSFET N-CH 900V 11A TO262-3
IXTA4N150HV-TRL
IXTA4N150HV-TRL
IXYS
MOSFET N-CH 1500V 4A TO263HV
2SK3705
2SK3705
Sanyo
N-CHANNL SILICON MOSFET FOR GENE
IPB100N06S3-04
IPB100N06S3-04
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
TSM3N90CP ROG
TSM3N90CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A TO252
R6504END3TL1
R6504END3TL1
Rohm Semiconductor
650V 4A TO-252, LOW-NOISE POWER

Related Product By Brand

FL2400148
FL2400148
Diodes Incorporated
CRYSTAL 24.0000MHZ 10PF SMD
FL2500129
FL2500129
Diodes Incorporated
CRYSTAL 25.00075MHZ 18PF SMD
NX34A00002
NX34A00002
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
S1613E-77.7600(T)
S1613E-77.7600(T)
Diodes Incorporated
XTAL OSC XO 77.7600MHZ LVCMOS
BAS70W-04-7-F
BAS70W-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT323
SD101C-T
SD101C-T
Diodes Incorporated
DIODE SCHOTTKY 40V 15MA DO35
DDZX43-7
DDZX43-7
Diodes Incorporated
DIODE ZENER 43V 300MW SOT23-3
DDTC142TU-7
DDTC142TU-7
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
APX809S-31SR-7
APX809S-31SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
APX803L-21SA-7
APX803L-21SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
LM4041DH5TA
LM4041DH5TA
Diodes Incorporated
IC VREF SHUNT 1% SC70-5
AH3762Q-P-A
AH3762Q-P-A
Diodes Incorporated
MAGNETIC SWITCH LATCH 3SIP