DMN62D4LFB-7B
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Diodes Incorporated DMN62D4LFB-7B

Manufacturer No:
DMN62D4LFB-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN62D4LFB-7B Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V~60V X2-DFN1006
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:407mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
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Similar Products

Part Number DMN62D4LFB-7B DMN62D0LFB-7B   DMN62D1LFB-7B  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 407mA (Ta) 100mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V - 1.5V, 4V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2Ohm @ 100mA, 4V 2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 10 V 0.45 nC @ 4.5 V 0.9 nC @ 4.5 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 30 V 32 pF @ 25 V 64 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW - 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3 X1-DFN1006-3
Package / Case 3-UFDFN 3-UFDFN 3-UFDFN

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