DMN62D1SFB-7B
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Diodes Incorporated DMN62D1SFB-7B

Manufacturer No:
DMN62D1SFB-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN62D1SFB-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 410MA 3DFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:80 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):470mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
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Similar Products

Part Number DMN62D1SFB-7B DMN62D1LFB-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.5V, 4V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 40mA, 10V 2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id 2.3V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 10 V 0.9 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 40 V 64 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 470mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3
Package / Case 3-UFDFN 3-UFDFN

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