DMN62D0SFD-7
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Diodes Incorporated DMN62D0SFD-7

Manufacturer No:
DMN62D0SFD-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN62D0SFD-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 540MA 3DFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30.2 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1212-3
Package / Case:3-UDFN
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Similar Products

Part Number DMN62D0SFD-7 DMN62D0LFD-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 540mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 1.8V, 4V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id 2.5V @ 1mA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87 nC @ 10 V 0.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30.2 pF @ 25 V 31 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 430mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1212-3 X1-DFN1212-3
Package / Case 3-UDFN 3-UDFN

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