DMN61D9UWQ-7
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Diodes Incorporated DMN61D9UWQ-7

Manufacturer No:
DMN61D9UWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN61D9UWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 400MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 5V
Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28.5 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):440mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMN61D9UWQ-7 DMN61D9UW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V 1.8V, 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5 V 0.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28.5 pF @ 30 V 28.5 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 440mW (Ta) 320mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

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