DMN61D9UWQ-7
  • Share:

Diodes Incorporated DMN61D9UWQ-7

Manufacturer No:
DMN61D9UWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN61D9UWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 400MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 5V
Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28.5 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):440mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.07
12,013

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN61D9UWQ-7 DMN61D9UW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V 1.8V, 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5 V 0.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28.5 pF @ 30 V 28.5 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 440mW (Ta) 320mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

NVE4153NT1G
NVE4153NT1G
onsemi
MOSFET N-CH 20V 915MA SC89
SQM40020EL_GE3
SQM40020EL_GE3
Vishay Siliconix
MOSFET N-CH 40V 100A TO263
TK5R3E08QM,S1X
TK5R3E08QM,S1X
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 5.3MOHM
TK5A60D(STA4,Q,M)
TK5A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 5A TO220SIS
IRF3710SPBF
IRF3710SPBF
Infineon Technologies
MOSFET N-CH 100V 57A D2PAK
FQPF9N08L
FQPF9N08L
onsemi
MOSFET N-CH 80V 7A TO220F
IRF6216TRPBF
IRF6216TRPBF
Infineon Technologies
MOSFET P-CH 150V 2.2A 8SO
AUIRF7665S2TR
AUIRF7665S2TR
Infineon Technologies
MOSFET N-CH 100V 4.1A DIRECTFET
MCH6431-P-TL-H
MCH6431-P-TL-H
onsemi
MOSFET N-CH 30V 5A MCPH6
IPA80R310CEXKSA1
IPA80R310CEXKSA1
Infineon Technologies
MOSFET N-CH 800V 6.8A TO220
PHX34NQ11T,127
PHX34NQ11T,127
NXP USA Inc.
MOSFET N-CH 110V 24.8A TO220F
2SK2094TL
2SK2094TL
Rohm Semiconductor
MOSFET N-CH 60V 2A CPT3

Related Product By Brand

3.0SMCJ13A-13
3.0SMCJ13A-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
GC1200008
GC1200008
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
UX22F62002
UX22F62002
Diodes Incorporated
XTAL OSC XO LVPECL SMD
BAT54Q-13
BAT54Q-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
BZX84C9V1T-7-F
BZX84C9V1T-7-F
Diodes Incorporated
DIODE ZENER 9.1V 150MW SOT523
DNLS160-7
DNLS160-7
Diodes Incorporated
TRANS NPN 60V 1A SOT23-3
DMC31D5UDA-7B
DMC31D5UDA-7B
Diodes Incorporated
MOSFET BVDSS: 25V-30V X2-DFN0806
ZXMP10A17E6TA
ZXMP10A17E6TA
Diodes Incorporated
MOSFET P-CH 100V 1.3A SOT26
AP9211SA-AG-HAC-7
AP9211SA-AG-HAC-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
PI5USB14550-AZEEX
PI5USB14550-AZEEX
Diodes Incorporated
IC PWR SWITCH USB 10TDFN
AP2210K-ADJTRG1
AP2210K-ADJTRG1
Diodes Incorporated
IC REG LIN POS ADJ 300MA SOT23-5
AZ1117BH-3.3TRE1
AZ1117BH-3.3TRE1
Diodes Incorporated
IC REG LINEAR 3.3V 850MA SOT223