DMN61D9UWQ-7
  • Share:

Diodes Incorporated DMN61D9UWQ-7

Manufacturer No:
DMN61D9UWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN61D9UWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 400MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 5V
Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28.5 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):440mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.07
12,013

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN61D9UWQ-7 DMN61D9UW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V 1.8V, 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5 V 0.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28.5 pF @ 30 V 28.5 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 440mW (Ta) 320mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

BUK9Y58-75B,115
BUK9Y58-75B,115
Nexperia USA Inc.
MOSFET N-CH 75V 20.73A LFPAK56
SI1411DH-T1-GE3
SI1411DH-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 420MA SOT363
IXTT68P20T
IXTT68P20T
IXYS
MOSFET P-CH 200V 68A TO268
PMPB08R4VPX
PMPB08R4VPX
Nexperia USA Inc.
MOSFET P-CH 12V 12A DFN2020M-6
PJQ4442P_R2_00001
PJQ4442P_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
FQU2N60CTLTU
FQU2N60CTLTU
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IXFK32N80P
IXFK32N80P
IXYS
MOSFET N-CH 800V 32A TO264AA
NTTFS4930NTAG
NTTFS4930NTAG
onsemi
MOSFET N-CH 30V 4.5A/23A 8WDFN
AOTF6N90
AOTF6N90
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 900V 6A TO220-3F
IPD65R420CFDATMA2
IPD65R420CFDATMA2
Infineon Technologies
MOSFET N-CH 650V 8.7A TO251-3
UJ4SC075018B7S
UJ4SC075018B7S
UnitedSiC
750V/18MOHM, N-OFF SIC STACK CAS
SUD25N04-25-T4-E3
SUD25N04-25-T4-E3
Vishay Siliconix
MOSFET N-CH 40V 25A TO252

Related Product By Brand

TBZ363C7V0-7-F
TBZ363C7V0-7-F
Diodes Incorporated
TVS DIODE 4VWM SOT363
S1613E-33.3330(T)
S1613E-33.3330(T)
Diodes Incorporated
XTAL OSC XO 33.3330MHZ LVCMOS
NX51A00002
NX51A00002
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS
HX31C50002
HX31C50002
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
UF1005-T
UF1005-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
US1D-13
US1D-13
Diodes Incorporated
DIODE GEN PURP 200V 1A SMA
DMT10H072LFV-7
DMT10H072LFV-7
Diodes Incorporated
MOSFET N-CH 100V PWRDI3333
DMP4025LSS-13
DMP4025LSS-13
Diodes Incorporated
MOSFET P-CH 40V 6A 8SO
DMN5L06-7
DMN5L06-7
Diodes Incorporated
MOSFET N-CH 50V 280MA SOT23-3
ZXMP6A16GTA
ZXMP6A16GTA
Diodes Incorporated
MOSFET P-CH 60V SOT223
PI74FCT273TSE
PI74FCT273TSE
Diodes Incorporated
IC FF D-TYPE SNGL 8BIT 20SOIC
AP2805DMM-G1
AP2805DMM-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8MSOP