DMN61D9UT-13
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Diodes Incorporated DMN61D9UT-13

Manufacturer No:
DMN61D9UT-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN61D9UT-13 Datasheet
ECAD Model:
-
Description:
2N7002 FAMILY SOT523 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 5V
Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28.5 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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In Stock

$0.05
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Similar Products

Part Number DMN61D9UT-13 DMN61D9UW-13   DMN61D9U-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 340mA (Ta) 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V 1.8V, 5V 1.8V, 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V 2Ohm @ 50mA, 5V 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5 V 0.4 nC @ 4.5 V 0.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28.5 pF @ 30 V 28.5 pF @ 30 V 28.5 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 260mW (Ta) 320mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-323 SOT-23-3
Package / Case SOT-523 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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