DMN61D8LVTQ-13
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Diodes Incorporated DMN61D8LVTQ-13

Manufacturer No:
DMN61D8LVTQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN61D8LVTQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 60V 0.63A TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:630mA
Rds On (Max) @ Id, Vgs:1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:12.9pF @ 12V
Power - Max:820mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:TSOT-26
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Similar Products

Part Number DMN61D8LVTQ-13 DMN61D8LVT-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 630mA 630mA
Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V 1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V 12.9pF @ 12V
Power - Max 820mW 820mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26 TSOT-26

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