DMN6140LQ-13
  • Share:

Diodes Incorporated DMN6140LQ-13

Manufacturer No:
DMN6140LQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN6140LQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 1.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
1,924

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN6140LQ-13 DMN6140L-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 1.8A, 10V 140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6 nC @ 10 V 8.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 40 V 315 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTMFS4852NT1G
NTMFS4852NT1G
onsemi
MOSFET N-CH 30V 16A/155A 5DFN
TP2635N3-G
TP2635N3-G
Microchip Technology
MOSFET P-CH 350V 180MA TO92-3
SIHG33N60E-GE3
SIHG33N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A TO247AC
SPA11N60CFDXKSA1
SPA11N60CFDXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO220-3
IXTA380N036T4-7
IXTA380N036T4-7
IXYS
MOSFET N-CH 36V 380A TO263-7
IRF9Z24
IRF9Z24
Vishay Siliconix
MOSFET P-CH 60V 11A TO220AB
IRFIZ24G
IRFIZ24G
Vishay Siliconix
MOSFET N-CH 60V 14A TO220-3
SPB100N03S2L-03
SPB100N03S2L-03
Infineon Technologies
MOSFET N-CH 30V 100A TO263-3
IXTP2N60P
IXTP2N60P
IXYS
MOSFET N-CH 600V 2A TO220AB
2SK1374G0L
2SK1374G0L
Panasonic Electronic Components
MOSFET N-CH 50V 50MA SMINI3-F2
RJK2555DPA-00#J0
RJK2555DPA-00#J0
Renesas Electronics America Inc
MOSFET N-CH 250V 17A 8WPAK
E3M0065090D
E3M0065090D
Wolfspeed, Inc.
SICFET N-CH 900V 35A TO247-3

Related Product By Brand

DRTR5V0U1LPQ-7B
DRTR5V0U1LPQ-7B
Diodes Incorporated
TVS DIODE 5.5VWM 10VC DFN1006-2
D15V0X1B2LPQ-7B
D15V0X1B2LPQ-7B
Diodes Incorporated
DATALINE PROTECTION PP X1-DFN100
SMF4L40AQ-7
SMF4L40AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FD5000071
FD5000071
Diodes Incorporated
XTAL OSC XO 50.0000MHZ CMOS SMD
FN1470035
FN1470035
Diodes Incorporated
XTAL OSC XO 14.7460MHZ CMOS SMD
SBR2A40SA-13
SBR2A40SA-13
Diodes Incorporated
DIODE SBR 40V 2A SMA
ZTX694BSTZ
ZTX694BSTZ
Diodes Incorporated
TRANS NPN 120V 0.5A E-LINE
DMG6898LSDQ-13
DMG6898LSDQ-13
Diodes Incorporated
MOSFET 2N-CH 20V 9.5A 8SO
74LVC08AT14-13
74LVC08AT14-13
Diodes Incorporated
IC GATE AND 4CH 2-INP 14TSSOP
PT8A9701PE
PT8A9701PE
Diodes Incorporated
IC MOTOR DRIVER 3V-12V
ZLPM8014JB20TC
ZLPM8014JB20TC
Diodes Incorporated
IC LNB CTLR PWR SUPPLY 20UQFN
PT7M7812LTBE
PT7M7812LTBE
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT143-4