DMN6140L-7
  • Share:

Diodes Incorporated DMN6140L-7

Manufacturer No:
DMN6140L-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN6140L-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 1.6A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.42
688

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN6140L-7 DMN6140LQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 1.8A, 10V 140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6 nC @ 10 V 8.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 40 V 315 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

CPH3355-TL-H
CPH3355-TL-H
onsemi
CPH3355 - SINGLE P-CHANNEL POWER
HTNFET-T
HTNFET-T
Honeywell Aerospace
MOSFET N-CH 55V 4POWER TAB
IXFR32N100Q3
IXFR32N100Q3
IXYS
MOSFET N-CH 1000V 23A ISOPLUS247
SQS484EN-T1_BE3
SQS484EN-T1_BE3
Vishay Siliconix
MOSFET N-CH 40V 16A 1212-8
IPA65R400CEXKSA1
IPA65R400CEXKSA1
Infineon Technologies
MOSFET N-CH 650V TO220
SIHG22N50D-E3
SIHG22N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 22A TO247AC
PJP10NA80_T0_00001
PJP10NA80_T0_00001
Panjit International Inc.
800V N-CHANNEL MOSFET
AOT3N100
AOT3N100
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 1000V 2.8A TO220
IXFH96N20P
IXFH96N20P
IXYS
MOSFET N-CH 200V 96A TO247AD
IRFR9020TR
IRFR9020TR
Vishay Siliconix
MOSFET P-CH 50V 9.9A DPAK
SCH1332-TL-H
SCH1332-TL-H
onsemi
MOSFET P-CH 20V 2.5A 6SCH
RS1G300GNTB
RS1G300GNTB
Rohm Semiconductor
MOSFET N-CH 40V 30A 8HSOP

Related Product By Brand

FD6660012
FD6660012
Diodes Incorporated
XTAL OSC XO SMD
UX31400003
UX31400003
Diodes Incorporated
XTAL OSC XO 40.0000MHZ CMOS
HD06-T
HD06-T
Diodes Incorporated
BRIDGE RECT 1P 600V 800MA 4-DIP
BZT52C20LP-7
BZT52C20LP-7
Diodes Incorporated
DIODE ZENER 20V 250MW 2DFN
DMTH4014LPSW-13
DMTH4014LPSW-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
BSS123-7
BSS123-7
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G34QW5-7
74LVC1G34QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25
PI74FCT162245TVEX
PI74FCT162245TVEX
Diodes Incorporated
IC TXRX NON-INVERT 5.5V 48SSOP
AP3019AUKTR-G1
AP3019AUKTR-G1
Diodes Incorporated
IC LED DRVR RGLTR PWM SOT23-6
AP3033KTR-G1
AP3033KTR-G1
Diodes Incorporated
IC LED DRVR RGLTR PWM TSOT23-6
AP1117E33G-13
AP1117E33G-13
Diodes Incorporated
IC REG LINEAR 3.3V 1A SOT223-3
PAM8904EJER
PAM8904EJER
Diodes Incorporated
AUDIO HIGH VOLT U-QFN3030-16