DMN60H4D5SK3-13
  • Share:

Diodes Incorporated DMN60H4D5SK3-13

Manufacturer No:
DMN60H4D5SK3-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN60H4D5SK3-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 2.5A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:273.5 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
349

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN60H4D5SK3-13 DMN60H3D5SK3-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V 3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V 12.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 273.5 pF @ 25 V 354 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 41W (Tc) 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPP80N06S2-07AKSA4
IPP80N06S2-07AKSA4
Infineon Technologies
N-CHANNEL POWER MOSFET
STP52N25M5
STP52N25M5
STMicroelectronics
MOSFET N-CH 250V 28A TO220
DMT10H010LSS-13
DMT10H010LSS-13
Diodes Incorporated
MOSFET N-CH 100V 11.5A/29.5A 8SO
STB21N65M5
STB21N65M5
STMicroelectronics
MOSFET N-CH 650V 17A D2PAK
IPP60R210CFD7XKSA1
IPP60R210CFD7XKSA1
Infineon Technologies
MOSFET N CH
IRFSL3206PBF
IRFSL3206PBF
Infineon Technologies
MOSFET N-CH 60V 120A TO262
AUIRLS8409-7P
AUIRLS8409-7P
Infineon Technologies
AUIRLS8409 - 20V-40V N-CHANNEL A
P3M07013K4
P3M07013K4
PN Junction Semiconductor
SICFET N-CH 750V 140A TO-247-4
NTP85N03
NTP85N03
onsemi
MOSFET N-CH 28V 85A TO220AB
IRFZ46NSTRRPBF
IRFZ46NSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 53A D2PAK
AON6752
AON6752
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 54A/85A 8DFN
RD3H200SNFRATL
RD3H200SNFRATL
Rohm Semiconductor
MOSFET N-CH 45V 20A TO252

Related Product By Brand

DRTR5V0U2SO-7
DRTR5V0U2SO-7
Diodes Incorporated
GENERAL PROTECTION PP SOT26 T&R
F83000023
F83000023
Diodes Incorporated
CRYSTAL 3.0000MHZ SURFACE MOUNT
FK1200026
FK1200026
Diodes Incorporated
XTAL OSC XO 12.0000MHZ CMOS
FN4800036
FN4800036
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
MMBD914-7-F
MMBD914-7-F
Diodes Incorporated
DIODE GEN PURP 75V 200MA SOT23-3
MMBD4148W-7
MMBD4148W-7
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOT323
BZT52C2V7S-7
BZT52C2V7S-7
Diodes Incorporated
DIODE ZENER 2.7V 200MW SOD323
DDTD143TC-7-F
DDTD143TC-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
PI6C22409WE
PI6C22409WE
Diodes Incorporated
IC ZERO DELY CLK BUFF 1:9 16SOIC
PI3V312QEX
PI3V312QEX
Diodes Incorporated
IC VIDEO MUX/DEMUX 2X1 16QSOP
APX812-40UG-7
APX812-40UG-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT143
AH3762Q-P-A
AH3762Q-P-A
Diodes Incorporated
MAGNETIC SWITCH LATCH 3SIP